CLAWS III-N Power Integration Engineer

PG194257EP

No

CLAWS III-N Power Integration Engineer

Commensurate with Education and Experience

Monday - Friday, 8 am - 5 pm

Raleigh, NC

Commercial Leap Ahead for Wide Bandgap Semiconductors (CLAWS)

North Carolina State University is leading the charge as the recipient of a $39.4 million award from the Department of Defense to establish the regional Microelectronics Commons regional innovation hub, Commercial Leap Ahead for Wide Bandgap Semiconductors (CLAWS). This initiative, part of the larger $238 million investment through the Creating Helpful Incentives to Produce Semiconductors (CHIPS) and Science Act, aims to revolutionize the field of wide bandgap semiconductors.
Hub leadership, Distinguished Professors John Muth and Fred Kish, are dedicated to the “lab to fab” journey—translating laboratory advancements into fabrication capabilities for wide bandgap semiconductors. The hub brings together a dynamic partnership with N.C. A&T State University and industry leaders, including Wolfspeed, Coherent Corp., General Electric, Bluglass, Adroit Materials, and Kyma Technologies, Inc. This collaborative effort will propel the development of semiconductors crucial for national defense, electric vehicles, power grid technologies, 5G/6G, quantum technologies, and artificial intelligence applications.

As a Pack member, you belong here, and can enjoy exclusive perks designed to enhance your personal and professional well-being.
What we offer:

• Medical, Dental, and Vision
• Flexible Spending Account
• Retirement Programs
• Disability Plans
• Life Insurance
• Accident Plan
• Paid Time Off and Other Leave Programs
• 12 Holidays Each Year
• Tuition and Academic Assistance
• And so much more!
  
  

We are seeking a highly skilled Wide-Bandgap Power Device Engineer to join our team and contribute to the development of next-generation power semiconductor devices. The ideal candidate will have expertise in semiconductor process integration, power device design (diodes, FETs, etc.), electrical characterization, and device simulation to drive innovation in high-efficiency, high-performance wide-bandgap power solutions.

Key Responsibilities

• Power Device Design & Development (30%)
  • Design and optimize GaN power devices (HEMTs, Diodes, lateral/vertical FETs) for high-voltage and high-frequency applications.
  • Utilize TCAD simulation (e.g., Synopsys, Silvaco, etc.) for process and device modeling, electrical characteristics prediction, and performance enhancement.
  • Develop and refine device layouts for wafer fabrication, ensuring manufacturability and reliability.

• Process Integration & Fabrication (30%)
  • Work to define and optimize GaN-on GaN, GaN-on-Si, GaN-on-SiC, and other heteroepitaxial structures for power applications.
  • Lead the wafer process flow development, including epi structures, etching, metallization, and passivation steps.
  • Troubleshoot process integration challenges related to defectivity, yield, and reliability.

• Electrical Characterization & Reliability Testing (20%)
  • Define and execute device characterization plans (IV, CV, breakdown, leakage, switching performance).
  • Analyze reliability metrics such as TDDB, HTRB, HTOL, and step-stress testing to assess long-term device stability.
  • Interface with packaging and application engineers to optimize thermal management and electrical performance in real-world applications.

• Cross-functional Collaboration (20%)
  • Work with process engineers and R&D partners to drive technology improvements.
  • Collaborate with circuit designers, applications engineers, and product development teams to translate device-level improvements into system-level advantages.
  • Stay up to date with emerging GaN technology trends, competitive landscape, and industry benchmarks.

• The successful candidate will:
  • Comply with stated workplace policies.
  • Communicate results, plans, and other updates to a variety of audiences.
  • Adhere to and mentor others in known best practices.
  • Support CLAWS activities such as tours, meetings, and conferences.

• Ph.D. or M.S. in Electrical Engineering, Materials Science, or a related field with a focus on power semiconductor devices.
• 3+ years of experience in GaN power device design and process integration (industry or research).

The successful candidate must demonstrate:

• A track record of publications in high-quality journals and/or conferences.
• Experience characterizing high-power semiconductor devices and extracting relevant device parameters.
• Excellent communication and interpersonal skills.
• Ability to multitask and meet deadlines with moderate supervision.
• Ability to follow safe procedures for working with semiconductor fabrication equipment, chemicals, and compressed gas cylinders.
• Comfort in collaborating with students, faculty, and staff of varying experience and backgrounds.
• Strong background in semiconductor physics, TCAD simulation, and electrical characterization.
• Hands-on experience with semiconductor process integration, fabrication, and failure analysis.
• Familiarity with GaN E-mode, D-mode, lateral vs. vertical device structures, and reliability challenges.
• Eligibility to obtain clearance upon request of the US government.

The successful candidate would preferably have additional experience in:

• TCAD device modeling.
• Additional characterization of materials and devices, including failure analysis, defect inspection, radiation effects, and high-k dielectrics.
• Fabrication of semiconductor devices for high-power applications.
• Lithography mask layout.
• MES and SPC systems.
• Statistical methods (e.g., DOE, GR&R) and tools (e.g., JMP, Minitab)
• Power electronics applications (high-voltage converters, automotive, RF, or data centers).
• Packaging constraints and thermal management for GaN devices.

• N/A

No

No

10/01/2025

Open Until Filled

Please include as attachments a resume/CV, cover letter, and contact information for at least 3 professional references.

00111622

EPS/SAAO

1.0

12 Month Recurring

Non Mandatory - Adverse Weather

Non Mandatory - Emergency Event

140110 - CLAWS

NC State University is an equal opportunity employer. All qualified applicants will receive equal opportunities for employment without regard to age, color, disability, gender identity, genetic information, national origin, race, religion, sex (including pregnancy), sexual orientation, and veteran status. The University encourages all qualified applicants, including protected veterans and individuals with disabilities, to apply. Individuals with disabilities requiring disability-related accommodations in the application and interview process are welcome to contact 919-513-0574 to speak with a representative of the Office of Equal Opportunity.

If you have general questions about the application process, you may contact Human Resources at (919) 515-2135 or workatncstate@ncsu.edu.

Final candidates are subject to criminal & sex offender background checks. Some vacancies also require credit or motor vehicle checks. Degree(s) must be obtained prior to start date in order to meet qualifications and receive credit.

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